Bifacial crystalline silicon solar panel with reflector

ABSTRACT

Bifacial crystalline solar cells and associated solar panel systems are provided. The cells include a p-type crystalline silicon layer and a barrier layer. The panels include at least two rows of cells. The cells in each row are connected to one another in series. The rows are connected in parallel. A reflector is used to reflect light towards the underside of the panel. A long axis of the reflector is arranged to be parallel to the rows of cells.

CROSS-REFERENCE TO RELATED APPLICATION(S)

This patent application claims priority under 35 U.S.C. §119(e) to U.S.Provisional Application No. 61/604517, filed Feb. 29, 2012, entitled“Bifacial c-Si Solar Panel with Reflectors and V2O5”, and to U.S.Provisional Application No. 61/649236, filed May 19, 2012, entitled“Bifacial c-Si Solar Panel with Reflectors and Various InterfaceMaterials”. Each of the above-identified patent applications is hereinincorporated by reference in its entirety.

BACKGROUND

Photovoltaic panels (“solar panels”) can be made to convert sunlightinto electricity. There are various technologies for making photovoltaicpanels, including mono-crystalline silicon wafer based,multi-crystalline silicon wafer based, and thin film silicon based. Manycommercially available photovoltaic panels are made with only one sideexposed to sunlight.

SUMMARY OF THE DISCLOSURE

Broadly, the present disclosure relates to improved photovoltaic solarcell systems and methods. In one approach, a bifacial solar cellincludes a p-type crystalline silicon layer coupled to an n-typesemiconductor layer. The bifacial solar cell may include a plurality offirst metal conductivity lines coupled to an n-type semiconductor layer.At least some of the first metal conductivity lines may be in electricalcommunication with the n-type semiconductor layer. The bifacial solarcell may include a barrier layer coupled to the p-type crystallinesilicon layer. The barrier layer may include one or more of oxides ofvanadium, oxides of molybdenum, nitrides of aluminum, tungsten nickeloxide, and boron doped diamond. In one embodiment, the barrier layer mayhave a thickness of from 1.0 nanometers to 10.0 nanometers. In otherembodiments, the barrier layer may have a thickness of from 2.0nanometers to 6.0 nanometers. The bifacial solar cell may include atransparent conductive layer coupled to the barrier layer. The bifacialsolar cell may include a plurality of second metal conductivity linescoupled to the transparent conductive layer. At least some of the secondmetal conductivity lines may be in electrical communication with thetransparent conductive layer. The bifacial solar cell may furtherinclude a passivation layer coupled to the first side of the n-typesemiconductor layer, and disposed between the plurality of first metalconductivity lines.

A photovoltaic system having a solar panel and at least one reflector isalso disclosed. The solar panel includes solar cells, at least some ofwhich are bifacial solar cells. The solar cells are arranged in thepanel to form at least two rows. The first row of solar cells may beelectrically connected in series. The first row of solar cells may havea first long axis. The second row of solar cells may be electricallyconnected in series. The second row of solar cells may have a secondlong axis coincidental to the first long axis. The first row of solarcells may be electrically connected to the second row of solar cells inparallel. The reflector is located proximal the solar panel. Thereflector includes a reflective surface facing the solar panel. In oneembodiment, the reflective surface may have a third long axis that iscoincidental to the first and second long axes. In one embodiment, thethird long axis forms an angle of from 5° to negative 5° to the firstand second long axes. The reflective surface may comprise at least oneof aluminum, silver, and/or a white colored material. In one embodiment,the reflective surface may have a compound-parabolic-shaped profile. Inother embodiments, the reflective surface may have a semicircular-shapedprofile, or a profile comprising planar surfaces. The solar panel mayfurther include a first transparent protective layer and/or a secondtransparent protective layer. The solar cells in the solar panel may bedisposed between the first transparent protective layer and the secondtransparent protective layer. The first transparent protective layer maybe coupled to the plurality of first metal conductivity lines of thebifacial solar cells via a first lamination layer. The secondtransparent protective layer may be coupled to the plurality of secondmetal conductivity lines of the bifacial solar cells via a secondlamination layer.

These and other aspects and advantages, and novel features of this newtechnology are set forth in part in the description that follows andwill become apparent to those skilled in the art upon examination of thefollowing description and figures, or may be learned by practicing oneor more embodiments of the technology provided for by the presentdisclosure.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic, perspective view of one embodiment of aphotovoltaic system, illustrating the electrical connections between thebifacial solar cells.

FIG. 2 is a partial, cross-sectional, schematic illustration of thephotovoltaic system of FIG. 1.

FIG. 3 a cross-sectional schematic illustration of an exemplary bifacialsolar cell of the photovoltaic system of FIG. 1.

FIG. 4 is a schematic, perspective view of the photovoltaic system ofFIG. 1.

FIG. 5 is a schematic illustration of another embodiment of a bifacialsolar cell, having an optional, highly doped p-type semiconductor layer.

FIG. 6 is a schematic, perspective view of a photovoltaic systemincluding a reflector having a compound-parabolic profile.

FIG. 7 is a schematic, perspective view of another embodiment of aphotovoltaic system including a reflector having a triangular profile.

FIG. 8 is a schematic, perspective view of another embodimentphotovoltaic system including a reflector having a trapezoidal profile.

FIG. 9 is a schematic, perspective view of another embodimentphotovoltaic system including a reflector having a profile comprisingplanar surfaces.

DETAILED DESCRIPTION

Reference will now be made in detail to the accompanying drawings, whichat least assist in illustrating various pertinent embodiments of the newtechnology provided for by the present disclosure.

Referring now to FIGS. 1-4, one embodiment of a bifacial solar panelsystem is illustrated. In the illustrated embodiment, the systemincludes a solar panel 100 and a reflector 120 located proximal thesolar panel 100. The solar panel 100 includes a plurality of bifacialsolar cells 110 arranged in two adjacent rows 112, 114. As used herein,“bifacial solar cell” means a semiconductor-based solar cell having anupper surface and a lower surface, wherein both the upper and lowersurfaces are photoactive. As used herein, “photoactive” means capable ofresponding to light photoelectrically. The first row of bifacial solarcells 112 has a first long axis 113. The second row of bifacial solarcells 114 has a second long axis 115. The reflector 120 includes atleast one reflective surface 130 facing the panel 100. The reflectivesurface 130 has a third long axis 132. The reflector 120 is configuredto promote reflection of solar radiation (sunlight) towards the panel100.

In the illustrated embodiment, the first row 112 is located proximal tothe second row 114 such that the first long axis 113 is coincidental tothe second long axis 115. Furthermore, the reflector 120 is orientedsuch that the third long axis 132 is coincidental to both the first andsecond long axes 113, 115. As used herein, “coincidental” meansapproximately parallel. For example, a first line may be coincidental tothe long axis of a reflector (e.g., forming an angle from about 15° toabout negative 15° to the long axis of the reflector).

The bifacial solar cells 110 of the first row 112 are electricallyconnected to one another in series. Similarly, the bifacial solar cells110 of the second row 114 are electrically connected to one another inseries. The first row 112 is electrically connected to the second row114 in parallel. The bifacial solar cells 110 are configured such thateach cell has a useful voltage, generally on the order of from about0.5V to about 1.5V.

The illustrated bifacial solar panel system can absorb light from bothsides and over a larger area than the area of the panel itself. This isfacilitated through the use of the reflector 120 that reflects sunlighttoward the underside of the solar panel 100. Furthermore, the reflectivesurface 130 having a long axis 132 may facilitate the reflection ofsunlight onto the underside of the solar panel 100 such that the amountof reflected sunlight incident on the panel is essentially uniformacross the panel in a direction parallel to the long axis 132, yethighly non-uniform across the panel in a direction perpendicular to thelong axis 132. As described above, the cells within the rows 112, 114are electrically connected to one another in series, and the rows 112,114 are electrically connected to one another in parallel. Furthermore,the rows 112, 114 are arranged with their long axes 113, 115 beingcoincidental to the long axis of the reflector 132. Thus, the bifacialsolar cells 110 are oriented to allow each of the cells in a row toreceive approximately the same amount of sunlight as the other cells inthat row, even though the sunlight incident on the underside of thepanel 100 may be highly non-uniform in the direction perpendicular tothe long axis of the reflector 132 (e.g., from the left side of thepanel to center of the panel 100). For example, a cell in the first row112 may receive approximately the same amount of sunlight as the othercells in the first row 112, even though the cells in the second row 114may receive much less sunlight. Thus, interconnecting the bifacial solarcells 110 in series to form rows, connecting the rows in parallel, andorienting the rows coincidental to the long axis of the reflector 132may improve panel efficiency without requiring an increase in panelarea.

The Bifacial Solar Cells

The bifacial solar cell 110 includes an n-type semiconductor layer 32, ap-type crystalline silicon layer 36, a barrier layer 40, and atransparent conductive layer 44. The n-type semiconductor layer 32 iscoupled to the p-type crystalline silicon layer 36. The p-typecrystalline silicon layer 36 is coupled to the barrier layer 40. Thebarrier layer 40 is coupled to the transparent conductive layer 44. Thebifacial solar cell 110 includes a plurality of first metal conductivitylines 24 coupled to the n-type semiconductor layer 32, and locatedopposite the p-type crystalline silicon layer 36. The bifacial solarcell 110 further includes a plurality of second metal conductivity lines48 coupled to the transparent conductive layer 44, and located oppositethe barrier layer 40.

The n-type semiconductor layer 32 generally comprises semiconductingmaterials adapted to promote free electrons. The n-type semiconductorlayer 32 may comprise semiconducting materials doped with phosphorous,antimony, and/or arsenic, among others. The n-type semiconductor layer32 may be crystalline, amorphous, multi-crystalline, or any combinationthereof. In one embodiment, the n-type semiconductor layer 32 comprisesphosphorous doped silicon.

The p-type crystalline silicon layer 36 generally comprises crystallinesilicon semiconducting materials adapted to promote electron holes. Asused herein, “crystalline silicon” means a material composed of at least99.9% silicon whose constituent atoms, molecules, or ions are arrangedin an ordered pattern extending in all three spatial dimensions.Crystalline silicon includes multi-crystalline silicon. As used herein,“multi-crystalline” (alternatively “polycrystalline”) means a solidmaterial composed of many small crystals (“grains”) of varying size andvarying orientation to one another, wherein the constituent atoms,molecules, or ions of each crystal are arranged in an ordered patternextending in all three spatial dimensions. Crystalline silicon may besolidified from a melt of essentially pure molten silicon (e.g., 99.99%silicon). Crystalline silicon does not include amorphous silicon. Asused herein “amorphous silicon” means a material containing siliconwhose constituent atoms, molecules, or ions lack an extended orderedpattern in all three spatial dimensions.

The p-type crystalline silicon layer 36 may comprise crystallinesemiconducting materials doped with boron, aluminum, and/or gallium,among others. In one embodiment, p-type crystalline silicon layer 36comprises boron doped crystalline silicon (e.g., a boron doped siliconwafer).

Sufficient thickness of the p-type crystalline silicon layer 36 mayfacilitate structural integrity of the bifacial solar cell 110. In oneembodiment, the thickness of the p-type crystalline layer 36 is fromabout 20,000 nanometers to about 300,000 nanometers. In otherembodiments, the thickness of the p-type crystalline layer 36 is fromabout 60,000 nanometers to about 250,000 nanometers, or from about100,000 nanometers to about 200,000 nanometers.

The barrier layer 40 generally may include one or more of oxides ofvanadium, oxides of molybdenum, nitrides of aluminum, tungsten nickeloxide, and boron doped diamond. In particular, oxides of vanadiumsuitable for the barrier layer 40 include those oxides of vanadiumdescribed by the empirical formula V_(x)O_(y), wherein0.130≦x/(x+y)≦0.60. In one embodiment, the barrier layer 40 is an oxideof vanadium having the empirical formula V₂O₅ (i.e., V_(x)O_(y), whereinx/(x+y)=0.2857). Suitable thicknesses of the barrier layer 40 may rangefrom about 1.0 nanometers to about 10.0 nanometers. In one embodiment,the barrier layer 40 has a thickness of not greater than 10.0nanometers. In one embodiment, the barrier layer 40 has a thickness ofnot greater than 6.0 nanometers. In one embodiment, the barrier layer 40has a thickness of at least 1.0 nanometers. In one embodiment, thebarrier layer 40 has a thickness of at least 2.0 nanometers. In oneembodiment, the barrier layer 40 has a thickness of about 3 nanometers.

The transparent conductive layer 44 generally comprises conductiveoxides. The transparent conductive layer 44 may include one or more offluorinated tin oxides, aluminum doped zinc oxides, and indium tinoxides, to name a few. In one embodiment, the transparent conductivelayer 44 is fluorinated tin oxides.

The first metal conductivity lines 24 and second metal conductivitylines 48 may be any high conductivity material adapted to facilitatecurrent travel over the bifacial solar cell 110. These metalconductivity lines 24, 48 may increase conductivity in the bifacialsolar cell 110, which may facilitate travel of current over longerdistances. These metal conductivity lines 24, 48 may be used to collectthe current from across the surfaces of the bifacial solar cell 110. Thesize of the metal conductivity lines 24, 48 should be restricted so asto restrict shading of the cell. In some embodiments the first metalconductivity lines 24 are made of the same materials as the second metalconductivity lines 48. In other embodiments, the first metalconductivity lines 24 are made of different materials than the secondmetal conductivity lines 48. The first metal conductivity lines 24 andthe second metal conductivity lines 48 may comprise one of more ofcopper, aluminum, or silver. In one embodiment, both the first and thesecond metal conductivity lines 24, 48 comprise silver.

The bifacial solar cells 110 may optionally include a passivation layer28 coupled to the n-type semiconductor layer 32, and disposed betweenthe plurality of first metal conductivity lines 24. The passivationlayer 28 may be any suitable material adapted to restrict recombinationof electrons and electron holes on the surface of the n-typesemiconductor layer 32. In one embodiment, the passivation layer 28comprises silicon nitride.

Turning now to FIG. 5, an alternative embodiment of a bifacial solarcell 111 is illustrated. The bifacial solar cell 111 may optionallyinclude a highly doped p-type semiconductor layer 38 disposed between,and coupled to, the p-type crystalline silicon layer 36 and the barrierlayer 40. The highly doped p-type semiconductor layer 38 generallycomprises a semiconductor material doped with boron, aluminum, and/orgallium among others. The highly doped p-type semiconductor layer 38 mayhave a high concentration of electron holes compared to the p-typecrystalline silicon layer 36. The highly doped p-type semiconductorlayer 38 may comprise amorphous and/or multi-crystalline semiconductormaterial. In one embodiment, the highly doped p-type semiconductor layer38 comprises boron doped silicon.

Method of Making the Bifacial Solar Cell and Panel System

A process of making the bifacial solar cell 110 begins with a p-type(e.g., boron doped) crystalline silicon wafer having an upper face, alower face, and sides (i.e., “surfaces”). The surfaces of the wafer maybe saw-damage etched to a depth of from about 8 microns to about 15microns. Next, the surfaces of the wafer may be texture etched to adepth of from about 3 microns to about 7 microns. Next, the surfaces ofthe wafer may be covered with phosphorous. Next, the phosphorous-coveredsurfaces of the wafer may be annealed, thereby facilitating thediffusion of phosphorous into the surfaces of the wafer and forming anamorphous phosphorous-silicon glass layer over the surfaces of thewafer. Next, the lower face and the sides of the wafer may be etched,thereby removing both the amorphous phosphorous-silicon glass layer andthe diffused phosphorous layer from all surfaces of the wafer except theupper face. Next, the amorphous phosphorous-silicon glass layer may beremoved from the upper face, via etching, leaving only the diffusedphosphorous layer on the upper face of the wafer. Thus, at this point inthe process the product includes an n-type semiconductor layer 32 (thediffused phosphorous layer on the upper face of the wafer) coupled to ap-type crystalline silicon layer 36 (the wafer). Next, a layer ofsilicon nitride may be deposited over the n-type semiconductor layer 32via plasma-enhanced chemical vapor deposition. Next, silver conductivitylines may be printed over the silicon nitride layer. Next, the upperface of the wafer, including the silicon nitride layer and the silverconductivity lines may be “fired”, thereby facilitating a processwhereby the silver conductivity lines may etch through the siliconnitride layer and come into electrical contact with the n-typesemiconductor layer 32. Thus, a plurality of first metal conductivitylines 24 (the silver conductivity lines) and a passivation layer 28 (thesilicon nitride layer) may be coupled to the n-type silicon layer 32.Next, vanadium oxide may be deposited onto the lower face of the wafer,thereby forming a barrier layer 40 (the vanadium oxide) coupled to thep-type crystalline silicon layer 36. Next, a transparent conductiveoxide may be deposited over the barrier layer 40, thereby forming atransparent conductive layer 44. Next, silver conductivity lines may beprinted over the transparent conductive layer 44. Finally, the silverconductivity lines may be “fired”. Thus, a plurality of second metalconductivity lines 48 may be coupled to the transparent conductive layer44.

The Solar Panel

In the illustrated embodiment, the solar panel 100 comprises bifacialsolar cells 110 disposed between a first transparent protective layer 20and a second transparent layer 52. The first transparent protectivelayer 20 may be adhered to the upper surfaces of the bifacial solarcells 110 via a first lamination layer 22. The second transparentprotective layer 52 may be adhered to the lower surfaces of the bifacialsolar cells 110 via a second lamination layer 50.

The first transparent protective layer 20 and the second transparentprotective layer 52 may be any suitable transparent materials adapted toprotect bifacial solar cells 110 and form the solar panel 100. In oneembodiment, the first and second transparent layers 20, 52 comprise lowiron glass.

The first lamination layer 22 and the second lamination layer 50 may beany suitable transparent adhesive material adapted to secure thebifacial solar cells 110 between the first and second transparent layers20, 52. In one embodiment, the first lamination layer 22 and the secondlamination layer 50 comprise ethyl-vinyl-acetate (EVA).

As described above, in one embodiment, the bifacial solar cells 110 ofthe solar panel 100 may be arranged to form two rows 112, 114, whereinthe bifacial solar cells 110 of the first row are electrically connectedto one another in series, wherein the bifacial solar cells 110 of thesecond row are electrically connected to one another in series, andwherein the first row 112 is electrically connected to the second row114 in parallel. Further, the long axes 113, 115 of the first and secondrow may be oriented to be coincidental to the long axis of the reflector132. However, in other embodiments the bifacial solar cells of the solarpanel may be in arranged in more than two rows (e.g., three rows, fourrows, five rows, etc.) wherein the bifacial solar cells within each roware electrically connected to one another in series, wherein the rowsare electrically connected in parallel, and wherein each of the rows hasa long axis oriented to be coincidental to the long axis of thereflector 132.

The Reflectors

The reflector(s) 120 may be any suitable device adapted to reflect solarradiation toward the underside of the solar panel 100. In theillustrated embodiment of FIGS. 1-4, the system employs two reflectors120 interconnected to the bottom of the solar panel 100. However, anynumber of reflectors 120 may be used with the solar panel 100, and onany side of the solar panel 100. As shown in FIG. 4, thearrangement/orientation of the reflectors 120 and the solar panel 100should allow for sunlight to reflect towards the solar panel 100.Generally, this arrangement is promoted via the use of suitable framesadapted to hold the solar panel 100 and/or reflectors 120 proximal toone another and at a suitable distance from one another.

The reflectors 120 should have a reflective surface 130 that includes along axis 132. This long axis 132 should be arranged/oriented to becoincidental to the long axes of the first and second rows ofsemiconductor cells 113, 115, for the reasons described above. In thisregard, the long axis 132 of the reflector 120 may, in some instances,symmetrically divide the reflector 120.

In some embodiments, reflectors 120 include reflective surfaces 130having a rounded/curved outer surface configured to direct solarradiation toward the underside of the solar panel 100. In oneembodiment, the reflective surface 130 has a semicircular-shapedprofile, as illustrated in FIGS. 1 and 4. In these embodiments, thereflective surface 130 has a generally curved shape in two dimensionsand extends linearly in the third dimension. Other curved objects havinga long axis may be employed. For example, turning now to FIG. 6, areflector 120 including a reflective surface 130 having acompound-parabolic-shaped profile is illustrated.

Turning now to FIGS. 7-9, various embodiments of reflectors 120 havingplanar shaped (i.e., non-curved) reflective surfaces 130 areillustrated. For example, the reflective surfaces 130 may comprisetriangular and/or trapezoidal profiles, as shown in FIGS. 7-9. Suchplanar shaped reflective surfaces 130 may be used in some circumstances.

The reflective surfaces 130 may comprise highly reflective materialssuch as polished silver and/or aluminum. The reflective surfaces 130 mayalso be at least partially white (e.g., coated with white paint) tofacilitate diffuse reflection of solar radiation toward the underside ofthe solar panel 100.

While various embodiments of the new technology described herein havebeen described in detail, it is apparent that modifications andadaptations of those embodiments will occur to those skilled in the art.However, it is to be expressly understood that such modifications andadaptations are within the spirit and scope of the presently disclosedtechnology.

What is claimed is:
 1. A bifacial solar cell (110) comprising: (a) ann-type semiconductor layer (32); (b) a plurality of first metalconductivity lines (24) coupled to a first side of the n-typesemiconductor layer (32); wherein at least some of the first metalconductivity lines (24) are in electrical communication with the n-typesemiconductor layer (32); (c) a p-type crystalline silicon layer (36)coupled to a second side of the n-type semiconductor layer (32); (d) abarrier layer (40) coupled to the p-type crystalline silicon layer (36),and located opposite the n-type semiconductor layer (32); wherein thebarrier layer (40) comprises at least one of: oxides of vanadium, oxidesof molybdenum, nitrides of aluminum, tungsten nickel oxide, and borondoped diamond; (e) a transparent conductive layer (44) coupled to thebarrier layer (40), and located opposite the p-type crystalline siliconlayer (36); (f) a plurality of second metal conductivity lines (48)coupled to the transparent conductive layer 44, and located opposite thebarrier layer (40); wherein at least some of the second metalconductivity lines (48) are in electrical communication with thetransparent conductive layer (44).
 2. The bifacial solar cell (110) ofclaim 1, wherein the barrier layer is an oxide of vanadium.
 3. Thebifacial solar cell (110) of claim 2, wherein the composition of theoxide of vanadium is described by the empirical formula V_(x)O_(y); andwherein 0.130≦x/(x+y)≦0.60.
 4. The bifacial solar cell (110) of claim 2,wherein the composition of the oxide of vanadium is described by theempirical formula V₂O₅.
 5. The bifacial solar cell (110) of claim 2,wherein the thickness of the barrier layer is at least 1.0 nanometers.6. The bifacial solar cell (110) of claim 2, wherein the thickness ofthe barrier layer is at least 2.0 nanometers.
 7. The bifacial solar cell(110) of claim 2, wherein the thickness of the barrier layer is notgreater than 10.0 nanometers.
 8. The bifacial solar cell (110) of claim2, wherein the thickness of the barrier layer is not greater than 6.0nanometers.
 9. The bifacial solar cell (110) of claim 1 comprising: apassivation layer (28), wherein the passivation layer (28) is coupled tothe first side of the n-type semiconductor layer (32), and disposedbetween the plurality of first metal conductivity lines (24).
 10. Aphotovoltaic system comprising: (i) a solar panel (100) having solarcells, the solar panel (100) comprising: (a) a first row (112) of solarcells electrically connected in series; wherein the first row (112) hasa first long axis (113); (b) a second row (114) of solar cellselectrically connected in series; wherein the second row (114) isadjacent to the first row (112); wherein the second row (114) has asecond long axis (115); wherein the second long axis (115) iscoincidental to the first long axis (113); wherein the first row (112)is electrically connected to the second row (114) in parallel; whereinat least some of the solar cells are bifacial solar cells (110); and(ii) at least one reflector (120) located proximal the solar panel(100); wherein the reflector (120) includes a reflective surface (130)facing the solar panel (100); wherein the reflective surface (130) has athird long axis (132); and wherein the third long axis (132) iscoincidental to the first and second long axes (113, 115).
 11. Thephotovoltaic system of claim 10, wherein the third long axis (132) formsan angle of from 5° to negative 5° to the first and second long axes(113, 115).
 12. The photovoltaic system of claim 10, wherein thereflective surface (130) comprises at least one of aluminum and silver.13. The photovoltaic system of claim 10, wherein at least a portion ofthe reflective surface (130) is white.
 14. The photovoltaic system ofclaim 10, wherein the reflective surface (130) has acompound-parabolic-shaped profile.
 15. The photovoltaic system of claim10, wherein the reflective surface (130) has a semicircular-shapedprofile.
 16. The photovoltaic system of claim 10, wherein the reflectivesurface (130) has a profile comprising planar surfaces.
 17. Thephotovoltaic system of claim 10 wherein the bifacial solar cells (110)comprise: (I) an n-type semiconductor layer (32); (II) a plurality offirst metal conductivity lines (24) coupled to a first side of then-type semiconductor layer (32); wherein at least some of the firstmetal conductivity lines (24) are in electrical communication with then-type semiconductor layer (32); (III) a p-type crystalline siliconlayer (36) coupled to a second side of the n-type semiconductor layer(32); (IV) a barrier layer (40) coupled to the p-type crystallinesilicon layer (36), and located opposite the n-type semiconductor layer(32); wherein the barrier layer (40) comprises at least one of: oxidesof vanadium, oxides of molybdenum, nitrides of aluminum, tungsten nickeloxide, and boron doped diamond; (V) a transparent conductive layer (44)coupled to the barrier layer (40), and located opposite the p-typecrystalline silicon layer (36). (VI) a plurality of second metalconductivity lines (48) coupled to the transparent conductive layer(44), and located opposite the barrier layer (40); wherein at least someof the second metal conductivity lines (48) are in electricalcommunication with the transparent conductive layer (44).
 18. Thephotovoltaic system of claim 17 wherein the bifacial solar cells (110)comprise: a passivation layer (28); wherein the passivation layer (28)is coupled to the first side of the n-type semiconductor layer (32), anddisposed between the plurality of first metal conductivity lines (24).19. The photovoltaic system of claim 17 comprising: a first transparentprotective layer (20); and a second transparent protective layer (52);wherein the solar cells are disposed between the first transparentprotective layer (20) and the second transparent protective layer (52).20. The photovoltaic system of claim 19, wherein the first transparentprotective layer (20) is coupled to the plurality of first metalconductivity lines (24) via a first lamination layer (22); and whereinthe second transparent protective layer (52) is coupled to the pluralityof second metal conductivity lines via a second lamination layer (50).